H. Müssig: search on Z-Library

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1

Mechanism of dopant segregation to SiO[sub 2]/Si(001) interfaces

Dabrowski, J., Casali, R. A., Müssig, H.-J., Baierle, R., Caldas, M. J., Zavodinsky, V.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2000

Language:

english

File:

PDF, 638 KB

english, 2000

2

Praseodymium silicate layers with atomically abrupt interface on Si(100)

Lupina, G., Schroeder, T., Dabrowski, J., Wenger, Ch., Mane, A., Lippert, G., Müssig, H.-J., Hoffmann, P., Schmeisser, D.

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 446 KB

english, 2005

3

Thermal stability of Pr silicate high-k layers on Si(001)

Lupina, G., Schroeder, T., Wenger, Ch., Dabrowski, J., Müssig, H.-J.

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 350 KB

english, 2006

4

Atomic-scale engineering of future high-k dynamic random access memory dielectrics: The example of partial Hf substitution by Ti in BaHfO[sub 3]

Dudek, P., Lupina, G., Kozłowski, G., Zaumseil, P., Bauer, J., Fursenko, O., Dabrowski, J., Schmidt, R., Lippert, G., Müssig, H.-J., Schroeder, T., Schmeißer, D., Zschech, E.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2011

Language:

english

File:

PDF, 1.08 MB

english, 2011

5

Structure, twinning behavior, and interface composition of epitaxial Si(111) films on hex-Pr[sub 2]O[sub 3](0001)∕Si(111) support systems

T. Schroeder, P. Zaumseil, G. Weidner, G. Lupina, C. Wenger, H. Müssig, P. Storck

Year:

2005

Language:

english

File:

PDF, 699 KB

english, 2005

6

Titanium-added praseodymium silicate high-k layers on Si(001)

T. Schroeder, G. Lupina, J. Dabrowski, A. Mane, C. Wenger, G. Lippert, H. Müssig

Year:

2005

Language:

english

File:

PDF, 357 KB

english, 2005

7

On the epitaxy of twin-free cubic (111) praseodymium sesquioxide films on Si(111)

T. Schroeder, P. Zaumseil, G. Weidner, C. Wenger, J. Dabrowski, H. Müssig, P. Storck

Year:

2006

Language:

english

File:

PDF, 971 KB

english, 2006

8

Structure and thickness-dependent lattice parameters of ultrathin epitaxial Pr[sub 2]O[sub 3] films on Si(001)

Schroeder, T., Lee, T.-L., Zegenhagen, J., Wenger, C., Zaumseil, P., Müssig, H.-J.

Journal:

Applied Physics Letters

Year:

2004

Language:

english

File:

PDF, 537 KB

english, 2004

9

Band gap and band discontinuities at crystalline Pr[sub 2]O[sub 3]/Si(001) heterojunctions

Osten, H. J., Liu, J. P., Müssig, H. J.

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 237 KB

english, 2002

10

Thin BaHfO[sub 3] high-k dielectric layers on TiN for memory capacitor applications

Lupina, G., Kozłowski, G., Dabrowski, J., Wenger, Ch., Dudek, P., Zaumseil, P., Lippert, G., Walczyk, Ch., Müssig, H.-J.

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 642 KB

english, 2008

11

Si Segregation into Pr[sub 2]O[sub 3] and La[sub 2]O[sub 3] high-k gate oxides

Lippert, G., Dąbrowski, J., Melnik, V., Sorge, R., Wenger, Ch., Zaumseil, P., Müssig, H.-J.

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 399 KB

english, 2005

12

Microscopic model for the nonlinear behavior of high-k metal-insulator-metal capacitors

Wenger, Ch., Lupina, G., Lukosius, M., Seifarth, O., Müssig, H.-J., Pasko, S., Lohe, Ch.

Journal:

Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 739 KB

english, 2008

13

Lattice engineering of dielectric heterostructures on Si by isomorphic oxide-on-oxide epitaxy

Schroeder, T., Costina, I., Storck, P., Wilke, A., Seifarth, O., Giussani, A., Müssig, H.-J., Zaumseil, P.

Journal:

Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 1.18 MB

english, 2008

14

Praseodymium silicate films on Si(100) for gate dielectric applications: Physical and electrical characterization

Lupina, G., Schroeder, T., Dabrowski, J., Wenger, Ch., Mane, A. U., Müssig, H.-J., Hoffmann, P., Schmeisser, D.

Journal:

Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 475 KB

english, 2006

15

Dielectric and structural properties of thin SrHfO[sub 3] layers on TiN

Lupina, G., Kozłowski, G., Dabrowski, J., Dudek, P., Lippert, G., Müssig, H.-J.

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 576 KB

english, 2008

16

Influence of the electrode material on HfO[sub 2] metal-insulator-metal capacitors

Wenger, Ch., Lukosius, M., Müssig, H.-J., Ruhl, G., Pasko, S., Lohe, Ch.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2009

Language:

english

File:

PDF, 585 KB

english, 2009

17

A CMOS Process-Compatible Wet-Etching Recipe for the High-k Gate Dielectrics Pr[sub 2]O[sub 3] and Pr[sub 2−x]Ti[sub x]O[sub 3]

Mane, A. U., Wenger, Ch., Schroeder, T., Zaumseil, P., Lippert, G., Weidner, G., Müssig, H.-J.

Journal:

Journal of The Electrochemical Society

Year:

2005

Language:

english

File:

PDF, 173 KB

english, 2005

18

Structure and strain relaxation mechanisms of ultrathin epitaxial Pr[sub 2]O[sub 3] films on Si(111)

Schroeder, T., Lee, T.-L., Libralesso, L., Joumard, I., Zegenhagen, J., Zaumseil, P., Wenger, C., Lupina, G., Lippert, G., Dabrowski, J., Müssig, H.-J.

Journal:

Journal of Applied Physics

Year:

2005

Language:

english

File:

PDF, 1.10 MB

english, 2005

19

Morphology and Composition of Selected High-k Materials and Their Relevance to Dielectric Properties of Thin Films

Dąbrowski, J., Lippert, G., Oberbeck, L., Schröder, U., Costina, I., Łupina, G., Ratzke, M., Zaumseil, P., Müssig, H.-J.

Journal:

Journal of The Electrochemical Society

Year:

2008

Language:

english

File:

PDF, 1.64 MB

english, 2008

20

[ECS 216th ECS Meeting - Vienna, Austria (October 4 - October 9, 2009)] ECS Transactions - Dielectric Properties of Thin Hf- and Zr-based Alkaline Earth Perovskite Layers

Lupina, Grzegorz, Dudek, Piotr, Kozłowski, Grzegorz, Dąbrowski, Jarek, Lippert, Gunther, Müssig, Hans-Joachim, Schroeder, Thomas

Year:

2009

Language:

english

File:

PDF, 723 KB

english, 2009

21

Publisher's Note: “Atomically smooth and single crystalline Ge(111)/cubic-Pr[sub 2]O[sub 3](111)/Si(111) heterostructures: Structural and chemical composition study” [J. Appl. Phys. 105, 033512 (2009)]

A. Giussani, P. Rodenbach, P. Zaumseil, J. Dabrowski, R. Kurps, G. Weidner, H. Müssig, P. Storck, J. Wollschläger, T. Schroeder

Year:

2009

Language:

english

File:

PDF, 389 KB

english, 2009

22

Dielectric properties of single crystalline PrO[sub 2](111)/Si(111) heterostructures: Amorphous interface and electrical instabilities

O. Seifarth, C. Walczyk, G. Lupina, J. Dabrowski, P. Zaumseil, G. Weidner, H. Müssig, T. Schroeder

Year:

2009

Language:

english

File:

PDF, 627 KB

english, 2009

23

On the band gaps and electronic structure of thin single crystalline praseodymium oxide layers on Si(111)

O. Seifarth, J. Dabrowski, P. Zaumseil, S. Müller, D. Schmeißer, H. Müssig, T. Schroeder

Year:

2009

Language:

english

File:

PDF, 742 KB

english, 2009

24

Micromorphology of Ge and Si1−xGex layers grown on Si(001) by solution epitaxy and the negative-differential conductivity on the Ge layer

Year:

1995

Language:

english

File:

PDF, 729 KB

english, 1995

25

Low coverage adsorption of Sb4 on Si(113) studied by scanning tunneling microscopy

Year:

1996

Language:

english

File:

PDF, 1.11 MB

english, 1996

26

The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO[sub 2](111)∕Si(111) support systems

A. Giussani, O. Seifarth, P. Rodenbach, H. Müssig, P. Zaumseil, T. Weisemöller, C. Deiter, J. Wollschläger, P. Storck, T. Schroeder

Year:

2008

Language:

english

File:

PDF, 1.01 MB

english, 2008